Contact type image sensor

Details Contact type image sensor Contact type image sensor

1988-08-18

1990-07-24

Jackson, Jr., Jerome

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 4, 357 51, 2505781, H01L 2714, H01L 3100

Patent

active

049438395

ABSTRACT:
A contact type image sensor has a transparent dielectric substrate, an upper transparent electrode, a lower electrode provided on the transparent dielectric substrate, a semiconductor thin film sandwiched between the upper transparent electrode and the lower electrode and constituting a photoelectric conversion part, a transparent dielectric layer formed on a plane of the lower electrode, and an upper electrode formed on the transparent dielectric layer and connected to the upper transparent electrode. The transparent dielectric layer constitutes a capacitance of the image sensor between the upper and lower electrodes.

REFERENCES:
patent: 4091406 (1978-05-01), Lewis
patent: 4679088 (1987-07-01), Chiyoma
patent: 4703169 (1987-10-01), Arita
patent: 4727407 (1988-02-01), Nobue
patent: 4759610 (1988-07-01), Yamagisawa

Affiliated with

Also associated with

Rating

Contact type image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact type image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact type image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1270103