Contact type image sensor

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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Details

357 58, 357 59, 250578, H01L 2714, H01L 3100, H01L 2904, H01L 2912

Patent

active

048558028

ABSTRACT:
Image sensors for use in facsimile machines and the like are formed in which an insulating film is interposed between the semiconductor film and the individual electrode contacts. When the image sensor is of the type having individual electrodes on the surface of an insulating substrate, and a common electrode on a surface of the semiconductor film away from the substrate, the insulating film is formed such that an opening exists over a consistent portion of each individual electrode through which the photoelectric conversion semiconductor film makes contact with the individual electrodes. The interposition of the insulating film keeps the semiconductor film from coming in contact directly with the insulating substrate, thus no impurity can diffuse from the substrate to the semiconductor film. Furthermore, satisfactory adhesion between the semiconductor film and the insulating film, and between the insulating film and the substrate, results in satisfactory adhesion between the semiconductor film and the substrate.

REFERENCES:
patent: 4549088 (1985-10-01), Ozawa
patent: 4607168 (1986-08-01), Oritsuki et al.
patent: 4665008 (1987-05-01), Nishiura et al.
patent: 4672221 (1987-06-01), Saito et al.
patent: 4679089 (1987-07-01), Kato
patent: 4739178 (1988-04-01), Nobue
patent: 4754152 (1988-06-01), Hayama et al.

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