Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-04-03
1999-07-06
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257915, 257751, 437190, H01L 2128, H01L 2190
Patent
active
059201223
ABSTRACT:
A titanium film is formed in a contact hole defined in a silicon substrate. The titanium film is transformed into a titanium silicide film and a first titanium nitride film by high-temperature lamp anneal. Further, a second titanium nitride film is stacked on the first titanium nitride film. Conditions are applied under which the titanium nitride films are formed into a granular crystal of primarily a (200) orientation. Therefore, barrier characteristics of the titanium nitride films to silicon atoms is not compromised even in the case of a subsequent high-temperature thermal treatment.
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"Diffusion Barrier with Reactively Sputtered TiN Film for Thermally Stable Contact in Advanced VLSI", by Katsunori Mitsuhashi, Osamu Yamazaki, Atsuhisa Inoue, Tatsu Morita., Koui Ohtake and Masayoshi Koba, Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, 1988, pp. 569-572.
Kawazu Yoshiyuki
Matsumoto Ryoichi
Brown Peter Toby
Duong Hung Van
OKI Electric Industry Co., Ltd.
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