Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-01-25
2005-01-25
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S154000, C257S515000, C257S517000, C257S526000, C257S587000
Reexamination Certificate
active
06847094
ABSTRACT:
The forming of a contact with a deep region of a first conductivity type formed in a silicon substrate. The contact includes a doped silicon well region of the first conductivity type and an intermediary region connected between the deep layer and the well. This intermediary connection region is located under a trench. The manufacturing method enables forming of vertical devices, in particular fast bipolar transistors.
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NA9109166, Silicon on Insulator Vertical Complementary Bipolar Device Structure, Sep. 1991, IBM Technical Disclosure Bulletin, vol. 34, Issue 4A, pp. 166-170.
Eckert George
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.A.
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