Contact structure of semiconductor devices and method of...

Details Contact structure of semiconductor devices and method of... Contact structure of semiconductor devices and method of...

2007-02-20

2007-02-20

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S752000, C257S753000

Reexamination Certificate

active

10833548

ABSTRACT:
A contact structure includes a lower conductive pattern disposed on a predetermined region of a semiconductor substrate. The lower conductive layer has a concave region at a predetermined region of a top surface thereof. An embedding conductive layer fills the concave region. The top surface of the embedding conductive layer is placed at least as high as the height of the flat top surface of the lower conductive pattern. A mold layer is disposed to cover the semiconductor substrate, the lower conductive pattern and the embedding conductive layer. An upper conductive pattern is arranged in an intaglio pattern. The intaglio pattern is disposed in the mold layer to expose a predetermined region of the embedding conductive layer.

REFERENCES:
patent: 6548410 (2003-04-01), Kwon
patent: 6607977 (2003-08-01), Rozbicki et al.
patent: 09186158 (1997-07-01), None

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