Contact structure of semiconductor device and method of manufact

Details Contact structure of semiconductor device and method of manufact Contact structure of semiconductor device and method of manufact

1994-07-15

1995-04-25

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257754, H01L 2904, H01L 2348, H01L 2944, H01L 2552

Patent

active

054101832

ABSTRACT:
A contact structure of a semiconductor device comprises a lamination of at least first insulating film, first conductive film and second insulating film formed in that order a through hole formed to penetrate through at least the first insulating film and the first conductive film so that a cross-section of the first conductive film is exposed to the through-hole and a second conductive film formed on an inner surface of the through-hole so that the second conductive film electrically contacts with the cross-section of the first conductive film.

REFERENCES:
patent: 4754318 (1988-06-01), Momose et al.
patent: 5174858 (1992-12-01), Yamamoto et al.

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