Contact structure of semiconductor device

Details Contact structure of semiconductor device Contact structure of semiconductor device

1981-12-28

1984-11-13

James, Andrew J.

357 55, 357 59, 357 65, H01L 2906, H01L 2904, H01L 2348

Patent

active

044829140

ABSTRACT:
When a side of a hole formed in a layer of a semiconductor device is located on a slope of a step-like portion, the side of the hole is formed so that it has a wave shape. A conductor line traverses the wave side of the hole.

REFERENCES:
patent: 3534267 (1970-10-01), Hyltin
patent: 4196443 (1980-04-01), Dingwall
patent: 4236171 (1980-11-01), Shen
patent: 4292643 (1981-09-01), Kellner et al.
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4360822 (1982-11-01), Roger

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