Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-11-07
1996-12-03
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257382, 257657, 257754, 257903, H01L 2711, H01L 29786, H01L 29417, H01L 2943
Patent
active
055810934
ABSTRACT:
A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer.
The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.
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Brown Peter Toby
Mitsubishi Denki & Kabushiki Kaisha
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