Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-06-13
2010-11-16
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021, C257SE23068, C257SE23010, C257SE21476, C257S690000, C257S780000, C257S781000, C257S783000, C257S784000
Reexamination Certificate
active
07834453
ABSTRACT:
A contact structure including a contact pad, a polymer bump and a conductive layer is provided in the present invention. The contact pad is disposed on a substrate. The polymer bump is disposed on the contact pad. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad. The invention further discloses a manufacturing method of a contact structure. First, a substrate is provided having a contact pad already formed thereon. Then, a polymer bump is formed on the contact pad and a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.
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“Notice of Allowance of Taiwan Counterpart Application” issued on Jun. 24, 2010, p. 1-p. 4, in which the listed reference was cited.
Au Optronics Corporation
Chi Mei Optoelectronics Corporation
Chunghwa Picture Tubes Ltd.
Hannstar Display Corporation
Industrial Technology Research Institute
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