Contact structure having a compliant bump and a test pad

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257SE23021, C257SE23068, C257SE23010, C257SE21476, C257S690000, C257S780000, C257S781000, C257S783000, C257S784000

Reexamination Certificate

active

07834453

ABSTRACT:
A contact structure including a contact pad, a polymer bump and a conductive layer is provided in the present invention. The contact pad is disposed on a substrate. The polymer bump is disposed on the contact pad. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad. The invention further discloses a manufacturing method of a contact structure. First, a substrate is provided having a contact pad already formed thereon. Then, a polymer bump is formed on the contact pad and a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.

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patent: 2008/0023830 (2008-01-01), Chang et al.
patent: 2008/0294011 (2008-11-01), McLoughlin
patent: 2009/0243093 (2009-10-01), Chang
patent: 2009/0246988 (2009-10-01), Yang et al.
patent: 487998 (2002-05-01), None
“Notice of Allowance of Taiwan Counterpart Application” issued on Jun. 24, 2010, p. 1-p. 4, in which the listed reference was cited.

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