Contact structure formed using supercritical cleaning fluid...

Details Contact structure formed using supercritical cleaning fluid... Contact structure formed using supercritical cleaning fluid...

2005-01-27

2008-12-09

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

C438S745000, C257SE21489, C257SE21584

Reexamination Certificate

active

07462561

ABSTRACT:
A supercritical fluid such as CO2cleans an opening formed in a Si-containing dielectric material and removes polymeric and organic residue produced by the etching process used to form the opening. The opening may be a contact, via or other opening and may include a cross-sectional area of less than 0.2 or 0.1 micron square. Atomic layer chemical vapor deposition (ALCVD) is used to form a thin barrier layer within the opening after the supercritical cleaning. A conductive material is formed over the barrier layer to provide a contact structure with improved contact resistance in VLSI devices.

REFERENCES:
patent: 6444495 (2002-09-01), Leung et al.
patent: 6852194 (2005-02-01), Matsushita et al.
patent: 7250374 (2007-07-01), Gale et al.
patent: 2005/0167841 (2005-08-01), Papa Rao et al.
patent: 2006/0099348 (2006-05-01), Narushima et al.

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