Contact structure for connecting an electrode to a semiconductor

Details Contact structure for connecting an electrode to a semiconductor Contact structure for connecting an electrode to a semiconductor

1993-08-18

1995-01-24

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257382, 257384, 257754, 257764, H01L 2348, H01L 2976, H01L 2352, H01L 2940

Patent

active

053844858

ABSTRACT:
A contact structure for connecting a semiconductor device to a wiring electrode includes a semiconductor layer forming a part of the semiconductor device. A first contact layer of reduced resistivity covers a surface of the semiconductor layer. An insulating structure is provided on the first contact layer so as to bury the first contact layer underneath. A penetrating hole is opened through the insulating structure so as to expose a part of the first contact layer. A second contact layer of reduced resistivity is provided on the part of the first contact layer exposed by the penetrating hole. The second contact layer extends from a bottom of the penetrating hole along its side wall. A conductor layer forms the wiring electrode provided on the second contact layer.

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