Contact structure comprising semiconductor and metal islands

Details Contact structure comprising semiconductor and metal islands Contact structure comprising semiconductor and metal islands

2005-07-20

2010-02-09

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S288000, C257SE29143, C257SE21046, C257SE21062

Reexamination Certificate

active

07659628

ABSTRACT:
Contact structures and methods for forming such contact structures are disclosed. An example contact structure includes a layer of semiconductor material having an interface and an electrical contact at the interface of the layer of semiconductor material, where the electrical contact includes a granular metal. An example method for forming a contact structure includes providing a substrate and producing a granular metal on at least part of the substrate, where the granular metal includes a cluster of metal islands extending essentially in a two-dimensional plane. The method further includes depositing a layer of a semiconductor material on top of the substrate and the cluster of metal islands.

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