Contact structure and process for formation

Details Contact structure and process for formation Contact structure and process for formation

1999-12-15

2001-09-18

Tsai, Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S622000, C438S639000, C438S648000, C438S618000, C257S768000, C257S774000

Reexamination Certificate

active

06291888

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to contact structures, and more particularly, to forming contact structures within semiconductor devices.
BACKGROUND OF THE INVENTION
Critical dimensions of semiconductor devices continue to decrease with new generations of products. In the past, it was not necessary to connect one interconnecting layer with another interconnecting layer by creating an opening through an intermediate conductive layer. However, as the dimensions shrink, the requirement to form an opening through an intermediate conductive layer becomes necessary.
As illustrated,
FIG. 18
includes a contact structure that has an opening through an intermediate conductive layer, wherein the contact structure is not to be electrically shorted or form electrical leakage paths between the intermediate conductive layer and the conductive layer within the contact structure.
FIG. 18
includes a semiconductor substrate
10
, an insulating layer
12
, a conductive layer
14
, another insulating layer
16
, a doped semiconductor layer
18
, a refractory metal silicide layer
20
, and an insulating layer
24
. An opening is formed that extends through layers
16
-
24
. Silicon nitride spacers
26
are formed within the opening, and subsequently, a conductive layer
28
is formed within the opening that electrically contacts the conductive layer
14
. The conductive layer
28
should be electrically insulated from the doped semiconductor layer
18
and refractory metal silicide layer
20
.
A need exists for forming a multi-level contact structure including openings through intermediate conductive layers where an overlying conductive layer is not electrically connected or has an electrical leakage path to an intermediate conductive layer where the overlying conductive layer and the intermediate conductive layer are to be electrically insulated from each other.


REFERENCES:
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4977105 (1990-12-01), Okamoto et al.
patent: 5204286 (1993-04-01), Doan
patent: 5262352 (1993-11-01), Woo et al.
patent: 5627395 (1997-05-01), Witek et al.
T.C.Chou et al., “Solid state interfacial reactions of Ti3A1 with Si3N4 and SiC”, J. Materials Research Society, vol. 7, No. 5, May 1992, pp. 1253-1265.
J.C. Barbour et al., “Thin-film reaction between Ti and Si3N4”, 1987 American Institute of Physics Lett. 50(15), Apr. 13, 1987, pp. 953-955.
T.P. Thorpe et al., “Electrical and optical properties of sputtered TiNx films as a function of substrate deposition temperature”, Appl. Phys. Lett. 49 (19), Nov. 10, 1986, pp. 1239-1241.

Affiliated with

Also associated with

Rating

Contact structure and process for formation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact structure and process for formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact structure and process for formation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2547822