Contact structure and memory element incorporating the same

Details Contact structure and memory element incorporating the same Contact structure and memory element incorporating the same

1997-06-18

2000-02-29

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

257758, 438622, H01L 2348, H01L 2352, H01L 2940

Patent

active

060312874

ABSTRACT:
Annular and linear contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.

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