Contact structure and manufacturing method thereof

Details Contact structure and manufacturing method thereof Contact structure and manufacturing method thereof

2005-02-01

2005-02-01

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S765000, C257S773000, C257S774000

Reexamination Certificate

active

06849948

ABSTRACT:
A contact structure and manufacturing method thereof is provided. A substrate having a first conductive layer and a dielectric layer thereon is provided. The dielectric layer has a contact opening that exposes a portion of the first conductive layer. A conductive nano-particle layer is formed on the exposed surface of the first conductive layer. Thereafter, a second conductive layer is formed inside the contact opening to cover the conductive nano-particle layer and form a contact structure. The conductive nano-particle layer at the bottom of the contact prevents the second conductive layer from peeling off and costs much less to produce.

REFERENCES:
patent: 20030178571 (2003-09-01), Nayfeh et al.

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