Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Reexamination Certificate
2005-06-07
2005-06-07
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
C257S727000, C324S757020
Reexamination Certificate
active
06903454
ABSTRACT:
A contact spring configuration for contacting semiconductor wafers is provided. At least one strip-type contact spring is provided on a substrate. The contact spring is fixed to a surface of the substrate on one side and is composed of a semiconductor material having a stress gradient which causes a permanent bending of the contact spring. The stress gradient in the semiconductor material is brought about by two semiconductor layers which are connected to one another and are mechanically strained differently. The different strains can be set by different doping or by deposition temperatures of different magnitude during the deposition of the semiconductor layers. The contact springs provide a good ohmic contact in particular with contact regions of a semiconductor wafer that are composed of a semiconductor material.
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Birner Albert
Franosch Martin
Goldbach Matthias
Andújar Leonardo
Flynn Nathan J.
Greenberg Laurence A.
Locher Ralph E.
Stemer Werner H.
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