Contact resistances in integrated circuits

Details Contact resistances in integrated circuits Contact resistances in integrated circuits

2005-04-19

2005-04-19

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

Combined with formation of ohmic contact to semiconductor...

C438S384000

Reexamination Certificate

active

06881655

ABSTRACT:
A method is provided of forming a low resistance contact between a poly-silicon resistor of an integrated circuit and a conducting material, the method comprising the steps of:a) covering the resistor with an insulating layer;b) etching at least one contact opening in the insulating layer;c) cleaning the insulating layer to remove any residues from the etching process;d) applying phosphoric acid; ande) depositing a conducting layer which forms an electrical contact with said resistor.

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