Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-04-21
1999-10-05
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257506, 257508, 257524, H01L 2900
Patent
active
059629088
ABSTRACT:
A contact region for a trench in a semiconductor device and a method for electrically contacting the conductive material in a trench that is too narrow for conventional electrical contacts may include a contact region in which the trench is divided into two or more trench sections, each section having the same narrow width as the undivided trench. The two or more trench sections are separated by one or more islands that are isolated from the semiconductor device. An aperture through the material above the contact region provides access for electrically contacting the conductive material in the trench sections.
REFERENCES:
patent: 5306942 (1994-04-01), Fujii
Beasom James D.
Woodbury Dustin A.
Harris Corporation
Loke Steven H.
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