Contact probe utilizing conductive meltable probing material

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324756, 324757, G01R 3102

Patent

active

055857361

ABSTRACT:
A contact probe for semiconductor in-line process monitoring or device measurement is disclosed in this invention which uses gallium, indium or any low-melting and low-vapor pressure electrically conductive alloy as a contact probing material. The probe can be used to directly measure mobile ion density without requiring the formation of aluminum dots on the semiconductor wafers. The safety issues caused by high temperature operation are also eliminated. The time requirement for process-equipment qualification is significantly reduced because the preparation time for aluminum dot formation is now eliminated. In comparison to the mercury probes, since in this invention, the contact is formed at high temperature thus leading to better contacts between the probe and the wafer, which in turn resulting in higher measurement accuracy. Furthermore, the conventional pin slip problem during elevated temperature stress is eliminated by the use of the contact probe of this invention. The device disclosed in this invention includes a metal tube or cylinder surrounded by heating element. A capillary probe connected with a metal or alloy reservoir inside the tube. For conducting the measurement, the conductive material in the reservoir and the capillary probe is melted. The amount of the conductive material in contact with the semiconductor wafer is controlled by the diameter of the capillary and the pressure of the reservoir.

REFERENCES:
patent: Re32024 (1985-11-01), Greig
patent: 3794912 (1974-02-01), Severin
patent: 4021735 (1977-05-01), Vieweg-Gutberlet et al.
patent: 4409547 (1983-10-01), Lederman
patent: 4521730 (1985-06-01), Shulman
patent: 5323035 (1994-06-01), Leedy

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