Contact probe storage FET sensor

Details Contact probe storage FET sensor Contact probe storage FET sensor

2003-12-17

2008-10-14

Hindi, Nabil Z (Department: 2627)

Dynamic information storage or retrieval

Specific detail of information handling portion of system

Electrical modification or sensing of storage medium

Reexamination Certificate

active

07436753

ABSTRACT:
A sensing device has a cantilever disposed with a medium which is movable relative to the cantilever, and a device associated with one of the cantilever and the medium, which is responsive to changes in electrical field between the medium and the cantilever caused by a distance between the medium and the cantilever changing.

REFERENCES:
patent: 3842194 (1974-10-01), Clemens
patent: 3920930 (1975-11-01), Sobczyk
patent: 4340956 (1982-07-01), Miller
patent: 4450550 (1984-05-01), Sterzer
patent: 4538165 (1985-08-01), Chang et al.
patent: 4912822 (1990-04-01), Zdeblick et al.
patent: 4998016 (1991-03-01), Nose et al.
patent: 5015850 (1991-05-01), Zdeblick et al.
patent: 5053995 (1991-10-01), Kajimura et al.
patent: 5138174 (1992-08-01), Tang
patent: 5235187 (1993-08-01), Arney et al.
patent: 5283437 (1994-02-01), Greschner et al.
patent: 5289004 (1994-02-01), Okada et al.
patent: 5323377 (1994-06-01), Chen et al.
patent: 5329513 (1994-07-01), Nose et al.
patent: 5345815 (1994-09-01), Albrecht et al.
patent: 5371728 (1994-12-01), Sakai et al.
patent: 5373494 (1994-12-01), Kawagishi et al.
patent: 5398299 (1995-03-01), Nakayama et al.
patent: 5412641 (1995-05-01), Shinjo et al.
patent: 5418363 (1995-05-01), Elings et al.
patent: 5426631 (1995-06-01), Miyazaki et al.
patent: 5526334 (1996-06-01), Yamano et al.
patent: 5537372 (1996-07-01), Albrecht et al.
patent: 5546374 (1996-08-01), Kuroda et al.
patent: 5583286 (1996-12-01), Matsuyama
patent: 5610898 (1997-03-01), Takimoto et al.
patent: 5679952 (1997-10-01), Lutwyche et al.
patent: 5680387 (1997-10-01), Yamano et al.
patent: 5751683 (1998-05-01), Kley
patent: 5751685 (1998-05-01), Yi
patent: 5753911 (1998-05-01), Yasuda et al.
patent: 5856672 (1999-01-01), Ried
patent: 5883705 (1999-03-01), Minne et al.
patent: 5923033 (1999-07-01), Takayama et al.
patent: 5953306 (1999-09-01), Yi
patent: 5969345 (1999-10-01), Williams et al.
patent: 5994698 (1999-11-01), Kawade et al.
patent: 6072764 (2000-06-01), Shido et al.
patent: 6073485 (2000-06-01), Kitamura
patent: 6218086 (2001-04-01), Binnig et al.
patent: 6249503 (2001-06-01), Aratani
patent: 6337477 (2002-01-01), Shimada et al.
patent: 6369385 (2002-04-01), Muray et al.
patent: 6401526 (2002-06-01), Dai et al.
patent: 6436794 (2002-08-01), Lee et al.
patent: 6440820 (2002-08-01), Lee et al.
patent: 6465782 (2002-10-01), Kendall
patent: 6477132 (2002-11-01), Azuma et al.
patent: 6515957 (2003-02-01), Newns et al.
patent: 6521921 (2003-02-01), Lim et al.
patent: 6580678 (2003-06-01), Kondo et al.
patent: 6665258 (2003-12-01), Dietzel et al.
patent: 7008811 (2006-03-01), Park et al.
patent: 7054257 (2006-05-01), Binnig et al.
patent: 7212487 (2007-05-01), Gibson
patent: 2003/0202456 (2003-10-01), Hong et al.
patent: 2005/0135199 (2005-06-01), Mejia et al.
patent: 0 803 702 (1997-10-01), None
patent: 0984444 (2000-03-01), None
patent: 01-197661 (1989-08-01), None
patent: 08-806788 (1996-04-01), None
patent: 10-239327 (1998-11-01), None
MAT (machine assisted translation) of JP 10-239327.
Patent Abstracts of Japan, vol. 013, No. 495 (P-956) Nov. 9, 1989.
Patent Abstracts of Japan, vol. 1996, No. 08, Aug. 30, 1996.
Presentation, 02 Field-Effect Transistor (FET) principles and types.
P. Vettiger, et al., “The Millipede—More than one thousand tips for future AFM data storage”, May 3, 2000, IBM J. Res. Develop. vol. 44:3.
Chuck Morehouse, “Beyond Magnetic Recording—Will it be probe-based storage”, IIST Workshop XVI Lake Arrowhead, Oct. 2000, IIST WS XVI, Hewlett-Packard Laboratories.

Affiliated with

Also associated with

Rating

Contact probe storage FET sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact probe storage FET sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact probe storage FET sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4005406