Contact printing as second exposure of double exposure...

Details Contact printing as second exposure of double exposure... Contact printing as second exposure of double exposure...

2005-03-01

2005-03-01

Mohamedulla, Salema R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S394000

Reexamination Certificate

active

06861180

ABSTRACT:
Utilizing contact printing as the second exposure within a double exposure attenuated phase shift mask (APSM) fabrication process is disclosed. The process defines the shift pattern within the attenuated layer of the APSM using a first exposure, such as electron beam (e-beam) writing. The attenuated layer may be MoSi, MoSiO, and so on. The process then defines the border pattern within the opaque layer of the APSM using a second exposure. The second exposure employs contact printing, utilizing a contact exposure mask. The contact printing process may align the contact exposure mask over the wafer on which the APSM is fabricated utilizing a camera and an image storage system storing an image of this wafer.

REFERENCES:
patent: 5633102 (1997-05-01), Toh et al.
patent: 5783337 (1998-07-01), Tzu et al.

Affiliated with

Also associated with

Rating

Contact printing as second exposure of double exposure... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact printing as second exposure of double exposure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact printing as second exposure of double exposure... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3441496