Contact portion of semiconductor integrated circuit device

Details Contact portion of semiconductor integrated circuit device Contact portion of semiconductor integrated circuit device

1988-07-25

1990-04-10

Hille, Rolf

357 68, 357 59, H01L 2348, H01L 2944, H01L 2904

Patent

active

049165216

ABSTRACT:
A first insulation layer is formed on a semiconductor substrate, and a first conductive layer is formed on the first insulation layer. A second insulation layer is formed on the first conductive layer and the first insulation layer, and a first contact hole, having a width greater than that of the first conductive layer, is formed in the second insulation layer, at a position corresponding to the first conductive layer. A second conductive layer, having a width greater than that of the first contact hole, is formed on the second insulation layer and in the first contact hole, and is formed in contact with the upper and side surfaces of the first conductive layer located inside the second contact hole. A third insulation layer is formed on the second conductive layer and the second insulation layer, and a second contact hole, having a width less than that of the second conductive layer, is formed in the third insulation layer, at a position corresponding to the second conductive layer. A third conductive layer, having a width greater than that of the second contact hole but less than that of the second conductive layer, is formed on the third conductive layer and in the second contact hole. The first conductive layer is electrically connected to the third conductive layer.

REFERENCES:
patent: 3877051 (1975-04-01), Calhoun et al.
patent: 4523216 (1985-06-01), Shiotari
patent: 4617193 (1986-10-01), Wu

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