Contact plug forming method

Details Contact plug forming method Contact plug forming method

1995-09-12

1997-03-04

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437195, 437245, 148DIG17, H01L 2128

Patent

active

056078781

ABSTRACT:
An inter-level insulation film is formed on a first-level interconnection layer and part of the inter-level insulation film which lies on the first-level interconnection layer is etched to form a contact hole. After a natural oxidation film formed on the surface of part of the first-level interconnection layer which is exposed in the contact hole is removed, the resultant structure is exposed to a gas atmosphere containing halogen to purify the surface of the inter-level insulation film. After this, a contact plug is deposited and formed on the first-level interconnection layer which is exposed in the contact hole by the selective CVD method to fill in the contact hole. A second-level interconnection layer is formed on the inter-level insulation film and the first-level and second-level interconnection layers are electrically connected to each other via the contact plug.

REFERENCES:
patent: 4804560 (1989-02-01), Shioya
patent: 4902645 (1990-02-01), Ohba
patent: 4985372 (1991-01-01), Narita
patent: 5037775 (1991-08-01), Reisman
patent: 5043299 (1991-08-01), Chang et al.
patent: 5201995 (1993-04-01), Reisman
S. Wolf "Silicon Processing for the VLSI Era: vol. 1", Lattice Press, 1986, pp. 547-550.
"Tungsten Selective CVD and Its Applications to VLSI Metallization", Hitoshi Itoh et al., ULSI Research Center, 28(1):48-54 (1989).

Affiliated with

Also associated with

Rating

Contact plug forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact plug forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact plug forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2145770