Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2009-04-28
2011-12-20
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S781000, C257S786000, C257S758000, C257S773000, C257S700000, C438S622000, C438S629000, C438S666000, C438S614000, C438S637000
Reexamination Certificate
active
08080881
ABSTRACT:
The invention provides a contact pad supporting structure. The contact pad supporting structure includes an underlying first conductive plate and an overlying second conductive plate, wherein the first and second conductive plates are separated by a first dielectric layer. A plurality of circular ring-shaped via plug groups comprising a plurality of circular ring-shaped via plugs is through the first dielectric layer, electrically connecting to the first and second conductive plates. All of the circular ring-shaped via plugs of each of the circular ring-shaped via plug groups are disorderly arranged.
REFERENCES:
patent: 5739587 (1998-04-01), Sato
patent: 2008/0246152 (2008-10-01), Liu et al.
Huang Yun-Lung
Lin Yung-Lung
Tsao Sheng-Hsiung
Nguyen Ha Tran T
Tran Thanh Y
Vanguard International Semiconductor Corporation
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