Contact of a semiconductor device and its manufacturing process

Details Contact of a semiconductor device and its manufacturing process Contact of a semiconductor device and its manufacturing process

1993-06-15

1994-10-25

Quach, T. N.

Fishing, trapping, and vermin destroying

437 50, 437192, 437228, 437984, 148DIG20, H01L 21283

Patent

active

053589033

ABSTRACT:
A contact of a semiconductor device and its manufacturing process are disclosed. A first conducting line, a first insulating layer, and a second conducting line are formed sequentially on a semiconductor substrate. And then, a second insulating layer is deposited on the substrate and photomasking process for making a contact is proceeded. A contact hole is formed by etching sequentially portions of the second insulating layer, the second conducting line, and the first insulating layer in order to expose a portion of the first conducting line. Thereafter, conductive material for a contact plug is filled in the contact hole in order to connect the first conducting line to the second conducting line.

REFERENCES:
patent: 4654113 (1987-03-01), Tuchiya et al.
patent: 4866009 (1989-09-01), Matsuda
patent: 4874719 (1989-10-01), Kurosawa
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4948756 (1990-08-01), Ueda
patent: 5169802 (1992-12-01), Yeh

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