Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-11-06
2009-12-29
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S192000, C257S192000, C257S194000, C257S195000, C257S196000, C257S197000, C257S199000, C257S200000, C257S201000, C257S743000, C257S744000, C257S745000, C257SE29188, C257SE21371, C257SE21541, C438S309000, C438S312000, C438S313000, C438S314000, C438S315000, C438S316000, C438S317000
Reexamination Certificate
active
07638820
ABSTRACT:
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the, same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.
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Bartlow Howard D.
Kordesch Martin E.
Woodin Richard L.
Au Bac H
Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
Picardat Kevin M
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