Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-11-07
2006-11-07
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C438S318000, C257SE29188, C257SE21371, C257SE21541
Reexamination Certificate
active
07132701
ABSTRACT:
Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same conductivity type through an opening in a compound semiconductor material of the opposite conductivity type. Another embodiment discloses a transistor including multiple compound semiconductor layers where a highly doped compound semiconductor material is electrically connected to a compound semiconductor layer of the same conductivity type through an opening in a compound semiconductor layer of the opposite conductivity type. Embodiments further include metal contacts electrically connected to the highly doped compound semiconductor material. A substantially planar semiconductor device is disclosed. In embodiments, the compound semiconductor material may be silicon carbide.
REFERENCES:
patent: 3633077 (1972-01-01), Tsuji et al.
patent: 3866310 (1975-02-01), Driver et al.
patent: 4683487 (1987-07-01), Ueyanagi et al.
patent: 4889821 (1989-12-01), Selle et al.
patent: 4945394 (1990-07-01), Palmour et al.
patent: 4949162 (1990-08-01), Tamaki et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5396087 (1995-03-01), Baliga
patent: 5409859 (1995-04-01), Glass et al.
patent: 5591651 (1997-01-01), Chen
patent: 5670803 (1997-09-01), Beilstein, Jr. et al.
patent: 5698871 (1997-12-01), Sakai et al.
patent: 5736863 (1998-04-01), Liu
patent: 5939738 (1999-08-01), Morris
patent: 5980265 (1999-11-01), Tischler
patent: 5982036 (1999-11-01), Uchibori et al.
patent: 6127695 (2000-10-01), Harris et al.
patent: 6218254 (2001-04-01), Singh et al.
patent: 6271097 (2001-08-01), Morris
patent: 6287930 (2001-09-01), Park
patent: 6313488 (2001-11-01), Bakowski et al.
patent: 6329675 (2001-12-01), Singh et al.
patent: 6399971 (2002-06-01), Shigematsu et al.
patent: 2003/0157745 (2003-08-01), Zeghbroeck et al.
patent: 63142867 (1988-06-01), None
Luo et al., “Demonstration of 4H-SiC power bipolar junction transistors,” Electronic Letters, Aug. 17, 2000, vol. 36, No. 17, pp. 1496-1497.
Tang et al., “An Implanted-Emitter 4H-SiC Bipolar Transistor with High Current Gain,” IEEE Electron Device Letters, vol. 22, No. 4, Mar. 2001, pp. 119-120.
Bartlow Howard D.
Kordesch Martin E.
Woodin Richard L
Fairchild Semiconductor Corporation
FitzGerald, Esq Thomas R.
Hiscock & Barclay LLP
Jackson Jerome
LandOfFree
Contact method for thin silicon carbide epitaxial layer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contact method for thin silicon carbide epitaxial layer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact method for thin silicon carbide epitaxial layer and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3688240