Contact mask having guard ring patterns for manufacturing a semi

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

Patent

active

058798382

ABSTRACT:
A contact mask having guard ring patterns for manufacturing a semiconductor device which can prevent a lifting of a photoresist film in guard ring regions. A first guard ring pattern and a second guard ring pattern in the contact mask are formed along the perimeter portion of contact patterns in the contact mask. The first and second guard ring patterns have a plurality of discontinuous patterns, respectively. Each of the discontinuous patterns of the first guard ring pattern and each of the discontinuous patterns of the second guard ring pattern are formed in a zigzag pattern relative to each other. During the etching process using the contact mask, a photoresist pattern for the guard ring is not lifted due to an insufficient area existing between the photoresist pattern and an insulating layer in the guard ring region.

REFERENCES:
patent: 4481041 (1984-11-01), Muller
patent: 5578422 (1996-11-01), Mizuno et al.

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