Contact manufacturing method of a multi-layered metal line struc

Fishing – trapping – and vermin destroying

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437231, 437235, 148DIG50, H01L 2144

Patent

active

053547136

ABSTRACT:
The present invention relates to a manufacturing method of a contact of a multi-layered metal line of a highly integrated semiconductor device.
The insulating layer between the metal lines is flattened and step coverage is improved by using a SOG layer or polyimide.

REFERENCES:
patent: 4965226 (1990-10-01), Gootzer et al.
patent: 4984055 (1991-01-01), Okumura et al.

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