Contact hole filling in a semiconductor device by irradiation wi

Details Contact hole filling in a semiconductor device by irradiation wi Contact hole filling in a semiconductor device by irradiation wi

1993-11-30

1996-04-30

Fourson, George

Fishing, trapping, and vermin destroying

437194, H01L 2144

Patent

active

055125123

ABSTRACT:
In order to fill contact holes (43) formed in an isolation layer (41) laid on a semiconductor substrate (13) and having a principal surface and sidewalls defining the contact holes with aluminum of a covering material which is sputter deposited in a sputter chamber to lay a covering film (47) on the principal surface and on the sidewalls, the covering film is brought into contact with an inert gas atmosphere in a reflow chamber and is subjected to irradiation by plasma of inert gas ions for removal of an aluminium oxide film (49) undesiredly formed on the covering film and, either subsequently by application of heat to the substrate or simultaneously by the irradiation, for reflow of aluminium of the covering material into the contact holes to provide a conductor film (51) covering the principal surface and filling the contact holes. Preferably, the plasma is given small ion energy of 30 to 50 eV and a high ion density.

REFERENCES:
patent: 5071791 (1991-12-01), Inoue et al.
patent: 5081064 (1992-01-01), Inoue et al.
patent: 5108951 (1992-04-01), Chen et al.
patent: 5279669 (1994-01-01), Lee
patent: 5453305 (1995-09-01), Lee
M. E. Day et al. "Low energy ion etching of aluminum oxide films" J. Appl. Phys. (Dec. 1992) v. 74 No. 11 pp. 5467-5470 (abstract).
C. S. Park et al., "A1-Plaph (Aluminum-Planarization by Post-Heating) . . . Metal CMOS Application", Proceedings of the Eighth VLSI Multilevel Interconnection Conference 1991, pp. 326-328.

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