Contact for semiconductor devices

Details Contact for semiconductor devices Contact for semiconductor devices

1978-01-16

1979-11-06

James, Andrew J.

357 65, 357 67, 357 54, H01L 2348, H01L 2944, H01L 2952

Patent

active

041737687

ABSTRACT:
A contact on a surface of a semiconductor device includes a post projecting from the surface of the device and a head on the post. The post has a transverse cross-sectional shape of at least three arms projecting radially from a common center point. The head has a cross-sectional area larger than the transverse cross-sectional area of the post. The post is on the surface of a body of semiconductor material and extends through a layer of an inorganic insulating material, such as an oxide or nitride, on the surface of the body. The post is of a height such that the head is spaced from the inorganic insulating material layer. A layer of an organic insulating material, such as a polyimide or silicone resin, may be provided on the inorganic insulating material layer and around the post to provide additional support for the head.

REFERENCES:
patent: 2885571 (1959-05-01), Williams et al.
patent: 3373481 (1968-03-01), Lins et al.
patent: 3432920 (1969-03-01), Rosenzweig
patent: 3653898 (1972-04-01), Shaw
patent: 4017886 (1977-04-01), Tomono et al.

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