Contact for integrated circuits

Details Contact for integrated circuits Contact for integrated circuits

1990-11-16

1992-05-26

Wojciechowicz, Edward J.

Fishing, trapping, and vermin destroying

357 55, 357 71, 357 73, 437180, 437235, 437978, 437982, H01L 2934, H01L 2144

Patent

active

051172739

ABSTRACT:
A method for forming a contact in a semiconductor integrated circuit includes the formation of a conformal oxide layer over the device followed by formation of a doped glass layer. The integrated circuit is heated to cause the glass layer to reflow, improving planarity of the circuit. A second conformal oxide layer is then formed, and contact vias are cut through the three part interlevel dielectric layer. Side walls are then formed in the via by depositing a third conformal layer, and anisotropically etching such layer. This isolates the doped reflowable glass layer from the via. Metal interconnect can then be deposited and defined, forming a contact in the via.

REFERENCES:
patent: 4485393 (1984-11-01), Kumamaru et al.
patent: 4962414 (1990-10-01), Liou et al.
patent: 4972251 (1990-11-01), Lehrer

Affiliated with

Also associated with

Rating

Contact for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact for integrated circuits will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-423425