Patent
1981-04-28
1985-02-26
James, Andrew J.
357 238, 357 239, 357 55, 357 65, 357 68, H01L 2978, H01L 2906, H01L 2348, H01L 2944
Patent
active
045020698
ABSTRACT:
An MIS-semiconductor component, includes a substrate having a surface, a first zone of a given first conductivity type embedded in the substrate, a second zone of a given second conductivity type embedded in the first zone, at least one insulating layer disposed on the substrate surface, a contact, and an auxiliary zone surrounding at least part of the contact and being of the second conductivity type and more heavily doped than the second zone. The at least one insulating layer and the second zone have a hole formed therein. The contact is connected to the first zone through the hole and is electrically connected to the second zone through the hole and the auxiliary zone.
REFERENCES:
patent: 4003126 (1977-01-01), Holmes et al.
patent: 4035826 (1977-07-01), Morton et al.
patent: 4080620 (1978-03-01), Chu
patent: 4160986 (1979-07-01), Johnson
patent: 4219835 (1980-08-01), van Loon et al.
patent: 4247788 (1981-01-01), Bluzer
patent: 4315271 (1982-02-01), Roger
patent: 4325169 (1982-04-01), Ponder et al.
IEEE Transaction on Electron Devices, vol. ED-27, No. 2, Feb. 1980, p. 384, FIG. 9, p. 380.
Carroll J.
Greenberg Laurence A.
James Andrew J.
Lerner Herbert L.
Siemens Aktiengesellschaft
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