Contact for a semiconductor light emitting device

Details Contact for a semiconductor light emitting device Contact for a semiconductor light emitting device

2009-07-21

2011-12-13

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S098000, C257S099000, C257SE33067

Reexamination Certificate

active

08076682

ABSTRACT:
A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.

REFERENCES:
patent: 4564997 (1986-01-01), Matsuo et al.
patent: 6900472 (2005-05-01), Kondoh et al.
patent: 6946685 (2005-09-01), Steigerwald et al.
patent: 2006/0060872 (2006-03-01), Edmond et al.
patent: 2006/0060874 (2006-03-01), Edmond et al.
patent: 2006/0255358 (2006-11-01), Shum
patent: 2008/0258133 (2008-10-01), Seong
patent: 2010/0051978 (2010-03-01), Katsuno et al.
patent: 1168460 (2002-01-01), None
patent: 1793429 (2007-05-01), None
patent: 5568655 (1980-05-01), None
patent: 2009039820 (2009-04-01), None
M. Saka et al. Entitled: “Fabrication of AG Micromaterials by Utilizing Stress-Induced Migration”, Department ofNanomechanics, Graduate School of Engineering, Tohoku University Aoba Jun. 6, 2001, Aramaki, Aoba-ku, Sendai 980-8579, Japan, IEEE, 2nd Electronics SystemIntegration Technology Conference, Greenwich, UK, pp. 507-510.

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