Contact etching utilizing multi-layer hard mask

Details Contact etching utilizing multi-layer hard mask Contact etching utilizing multi-layer hard mask

2006-06-20

2006-06-20

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S637000

Reexamination Certificate

active

07064044

ABSTRACT:
A method for forming contact holes using a multi-layer hard mask. A substrate with a device region and an alignment region having an opening therein to serve as an alignment mark is provided. A dielectric layer is formed overlying the substrate and fills the opening, followed by the multi-layer hard mask. The multi-layer hard mask over the opening is partially removed and that on the device region is patterned to form a plurality of holes therein and expose the underlying dielectric layer. The exposed dielectric layer on the device region is etched to form the plurality of contact holes therein.

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