Contact etch stop film

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S640000, C257SE21267

Reexamination Certificate

active

07629673

ABSTRACT:
A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer. In addition, the partially completed integrated circuit device includes a profile characterized by the silicon dioxide material in the first thickness portion changing to the silicon nitride material in the second thickness portion.

REFERENCES:
patent: 6255233 (2001-07-01), Smith et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6884464 (2005-04-01), Luo et al.

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