Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-12-15
2009-12-08
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S640000, C257SE21267
Reexamination Certificate
active
07629673
ABSTRACT:
A system and method for improved dry etching system. According to an embodiment, the present invention provides a partially completed integrated circuit device. The partially completed integrated circuit device includes a semiconductor substrate having a surface region. The partially completed integrated circuit device also includes an etch stop layer overlying the surface region. The etch stop layer is characterized by a thickness having at least a first thickness portion and a second thickness portion. The second thickness portion includes an etch stop surface region. The partially completed integrated circuit device additionally includes a silicon dioxide material provided within the first thickness portion of the etch stop layer. The partially completed integrated circuit device includes a silicon nitride material provided within the second thickness portion of the etch stop layer. In addition, the partially completed integrated circuit device includes a profile characterized by the silicon dioxide material in the first thickness portion changing to the silicon nitride material in the second thickness portion.
REFERENCES:
patent: 6255233 (2001-07-01), Smith et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6884464 (2005-04-01), Luo et al.
Ho Hok Min
Ma Ching Tien
Song Woei Ji
Patton Paul E
Semiconductor Manufacturing International (Shanghai) Corporation
Smith Zandra
Townsend and Townsend / and Crew LLP
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