Contact etch process

Details Contact etch process Contact etch process

1988-03-16

1992-02-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437235, 437238, 437233, 156643, 156644, 156652, 156653, H01L 21302

Patent

active

050875914

ABSTRACT:
Contact etching is simplified by including a conformal etch stop layer underneath the interlevel or multilevel oxide (MLO). Etching through the unequal thickness of the MLO with sufficient overetching to reliably clear the thickest parts of the MLO layer will therefore not damage the silicon contact areas underneath the thinner parts of the MLO. Process control is also improved.
Preferably this conformal etch stop layer is a conductor, and is grounded to configure a field plate over the entire surface of the chip.

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Abbas, S. A., Barile, C. A. and Dockerty, R. C., "Doped Polycrystalline Field Shield Process" IBM Tech. Disc. Bull. 15(6), Nov. 1972, p. 1981.
Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, Inc., 1983, pp. 420-424.
Webster's Ninth New Collegiate Dictionary, Merriam-Webster, Inc. 1986, p. 276.

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