Contact electrode structure for semiconductor device

Details Contact electrode structure for semiconductor device Contact electrode structure for semiconductor device

1991-09-10

1994-04-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257775, 257784, 257771, H01L 2348, H01L 2944

Patent

active

053028554

ABSTRACT:
A semiconductor device and a manufacture method for the semiconductor device, the method comprising the steps of forming an insulating film on the surface of a semiconductor substrate, forming contact holes in the insulating layer to expose the surface of the semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on the exposed surface to form an electrodes in each the contact hole, and forming a wiring made of a second metal, which contains as a principal ingredient an element other than aluminum, on both the insulating layer and the electrode. Preferably, the upper surface of each electrode is substantially flat in a connecting portion between the electrode and the wiring, and a relationship of A.gtoreq.C is established where A is a length of one side of the electrode's upper surface and C is a width of the wiring in the connecting portion therebetween. The metal film is produced at a high deposition rate and a high throughput while ensuring good reliability and presenting superior film characteristics such as step coverage and electro migration.

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