Contact electrode for semiconductor component

Details Contact electrode for semiconductor component Contact electrode for semiconductor component

1977-06-29

1978-08-22

James, Andrew J.

357 40, 357 49, 357 59, 357 65, H01L 2972, H01L 2702, H01L 2712

Patent

active

041092732

ABSTRACT:
A semiconductor device having one or more electrodes thereon composed of doped polycrystalline silicon. Initially undoped polycrystalline silicon is applied at select electrode positions of a semiconductor device and is then doped by diffusion or implantation. The resultant device is characterized by a high current amplification, a low inner path of resistance and low noise.

REFERENCES:
patent: 3456335 (1969-07-01), Hennings et al.
patent: 3717514 (1973-02-01), Burgess
patent: 3806361 (1974-04-01), Lehner
patent: 3847687 (1974-11-01), Davidsohn
patent: 4005453 (1977-01-01), Lecan et al.
patent: 4008107 (1977-02-01), Hayasaka et al.
Quadratpilze aus Polysilizium, published 6-74.
Geues aus der Technik, nr. 3, vom. 15 6/74.

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