Contact efuse structure

Details Contact efuse structure Contact efuse structure

2008-12-02

2011-10-11

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE21476, C257SE29166, C438S281000, C438S289000

Reexamination Certificate

active

08035191

ABSTRACT:
A contact efuse structure includes a silicon layer and a contact contacting the silicon layer with one end. When a voltage is applied to the contact, a void is formed at the end of the contact, and thus the contact is open. Such structure may be utilized in an efuse device or a read only memory. A method of making a contact efuse device and a method of making a read only memory are also disclosed.

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Shine. Chung, Jiann-Tseng Huang, Paul Chen, Fu-Lung Hsueh, “A 512x8 Electrical Fuse Memory with 15μm2 Cells Using 8-sq Asymmetric Fuse and Core Devices in 90nm CMOS” 2007 Symposium on VLSI Circuits Digest of Technical Papers, Jun. 14, 2007, pp. 74-75, Kyoto, Japan.

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