Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000
Reexamination Certificate
active
07102163
ABSTRACT:
A TFT for controlling the power supplied to an element to be driven, such as an organic EL element which operates based on the supplied power, is provided between the element to be driven and a power supply line VL. The TFT and the element to be driven are electrically connected by a wiring layer. The contact position between the wiring layer and the TFT and the contact position between the wiring layer and the element to be driven are positioned so as to be distant from each other. Alternatively, at least the contact hole region of a first electrode of the element is covered by a flattening layer. With this structure, it is possible to realize a flatter surface on which to form, for example, the emissive layer of the element to be driven.
REFERENCES:
patent: 5124776 (1992-06-01), Tanizawa et al.
patent: 5897328 (1999-04-01), Yamauchi et al.
patent: 5986632 (1999-11-01), Takayama et al.
patent: 6326249 (2001-12-01), Yamazaki et al.
patent: 6369507 (2002-04-01), Arai
patent: 6420200 (2002-07-01), Yamazaki et al.
patent: 6781153 (2004-08-01), Anzai
Copy of Office Action for corresponding Korean Patent Application No. 10-2004-0095111 with English excerpt translation.
Copy of Korean Patent Laid-Open Publication No. 1993-0003838 and U.S. Patent 5,124,776 (both corresponding to Korean Patent Registration No. 0063966.
Copy of Korean Patent Laid-Open Publication No. 1999-26, which was cited in Korean Patent Appln. 10-2004-0095111, with its English translation excerpt.
Handbook of Multilevel Metallization for Integrated Circuits Materials, Technology, and Applications, Noyes Publications, Westwood, NJ, USA, 1993, p. 357, 386, and 389.
Cantor & Colburn LLP
Pham Long
Sanyo Electric Co,. Ltd.
LandOfFree
Contact between element to be driven and thin film... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Contact between element to be driven and thin film..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact between element to be driven and thin film... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3586300