Contact and via fabrication technologies

Details Contact and via fabrication technologies Contact and via fabrication technologies

1997-02-20

1999-03-16

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257759, 257773, 257774, H01L 2934, H01L 2348

Patent

active

058834362

ABSTRACT:
A method of forming a contact opening between two conductive features over a semiconductor substrate. Oxide spacers are formed adjacent to the conductive features. A doped oxide layer is then deposited over the semiconductor substrate. Finally, the contact opening is etched through the doped oxide layer between the conductive features such that the oxide spacers are exposed within the contact opening.

REFERENCES:
patent: 5094900 (1992-03-01), Langley
patent: 5174858 (1992-12-01), Yamamoto et al.
patent: 5216281 (1993-06-01), Butler
patent: 5262662 (1993-11-01), Gonzalez et al.
patent: 5286674 (1994-02-01), Roth et al.
patent: 5332924 (1994-07-01), Kobayashi
patent: 5362666 (1994-11-01), Dennison
patent: 5408130 (1995-04-01), Woo et al.

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