Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-09-25
2007-09-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S091000, C257S095000, C257S097000, C257S098000, C257S099000, C257S100000, C257S101000, C257S103000, C257S076000, C257S077000, C257SE33064, C257SE33065, C257SE33069
Reexamination Certificate
active
10960391
ABSTRACT:
A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying the light emitting layer. A conductive transparent layer, e.g., of indium tin oxide, and a reflective metal layer overlie the layer of second conductivity type and provide electrical contact with the layer of second conductivity type. A plurality of vias may be formed in the reflective metal and conductive transparent layer as well as the layer of second conductivity type, down to the doped substrate layer. A plurality of contacts are formed in the vias and are in electrical contact with the doped substrate layer. An insulating layer formed over the reflective metal layer insulates the plurality of contacts from the conductive transparent layer and reflective metal layer.
REFERENCES:
patent: 6530991 (2003-03-01), Tanaka et al.
patent: 6667529 (2003-12-01), Takagi
patent: 6784462 (2004-08-01), Schubert
patent: 6784463 (2004-08-01), Camras et al.
patent: 2002/0141006 (2002-10-01), Pocius et al.
patent: 2003/0230754 (2003-12-01), Steigerwald et al.
patent: 2005/0167680 (2005-08-01), Shei et al.
patent: 2005/0173724 (2005-08-01), Liu
Ray-Hua Horng et al., “High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si”, Jpn. J. Appl. Phys. vol. 40 (2001), pp. 2747-2751.
C. L. Chau et al., “Indium Tin Oxide Transparent Electrodes for Broad-Area Top-Emitting Vertical-Cavity Lasers Fabricated Using a Single Lithography Step”, IEEE Photonics Technology Letters, vol. 9, No. 5 May 1997, pp. 551-553.
T. Gessmann, et al., “Omnidirectional Reflective Contacts for Light-Emitting Diodes”, IEEE Electron Device Letters, vol. 24, No. 10, Oct. 2003, pp. 683-685.
Jackson Jerome
Nguyen Joseph
Philips Lumileds Lighting Company LLC
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