Constructions comprising insulative materials

Details Constructions comprising insulative materials Constructions comprising insulative materials

2001-08-02

2002-12-31

Williams, Alexander O. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S632000, C257S537000, C257S642000, C257S643000, C428S546000, C428S116000, C428S221000, C428S323000, C428S331000

Reexamination Certificate

active

06501179

ABSTRACT:

TECHNICAL FIELD
The invention pertains to methods of forming material adjacent electrical components and to methods of forming material between conductive electrical components. The invention further pertains to insulating materials formed adjacent or between conductive electrical components.
BACKGROUND OF THE INVENTION
A prior art semiconductor wafer fragment
10
is illustrated in FIG.
1
. Wafer fragment
10
comprises a substrate
12
and conductive electrical components
14
,
16
and
18
overlying substrate
12
. Conductive electrical components
14
,
16
and
18
may comprise, for example, conductive lines. Such conductive lines may be formed from metal, or conductively-doped polysilicon. Between conductive components
14
,
16
and
18
is formed an insulative material
20
. Material
20
electrically isolates conductive elements
14
,
16
and
18
from one another. Insulative material
20
may comprise materials known to persons of ordinary skill in the art, including, for example, silicon dioxide, silicon nitride, and undoped silicon. Although each of these materials has good insulative properties, the materials disadvantageously have high dielectric constants which can lead to capacitive coupling between proximate conductive elements, such as elements
14
,
16
and
18
. For instance, silicon nitride has a dielectric constant of about 8 and undoped silicon has a dielectric constant of about 11.8.
A prior art method for insulating conductive elements
14
,
16
and
18
from one another, while reducing a dielectric constant of a material between conductive elements
14
,
16
and
18
is illustrated in
FIGS. 2 and 3
. In referring to
FIGS. 2 and 3
, similar numbers to those utilized in
FIG. 1
will be used, with differences indicated by the suffix “a” or by different numerals.
Referring to
FIG. 2
, a semiconductor wafer fragment
10
a
is illustrated. Fragment
10
a
comprises a substrate
12
a
, and overlying conductive lines
14
a
,
16
a
and
18
a
. Between lines
14
a
,
16
a
and
18
a
is a carbon layer
22
. Conductive lines
14
a
,
16
a
and
18
a
are inlaid within carbon layer
22
by a damascene method. A thin, gas-permeable, silicon dioxide layer
24
is formed over conductive lines
14
a
,
16
a
and
18
a
, and over carbon layer
22
.
Referring to
FIG. 3
, carbon layer
22
is vaporized to form voids
26
between conductive elements
14
a
,
16
a
and
18
a
. Voids
26
contain a gas. Gasses advantageously have dielectric constants of about 1.
It would be desirable to develop alternative methods for insulating conductive elements from one another with low-dielectric-constant materials.
SUMMARY OF THE INVENTION
The invention encompasses methods of forming insulating materials between conductive elements. The invention pertains particularly to methods utilizing low-dielectric-constant materials for insulating conductive elements, and to structures encompassing low-dielectric-constant materials adjacent or between conductive elements.
In one aspect, the invention encompasses a method of forming a material adjacent a conductive electrical component. The method includes providing a mass adjacent the conductive electrical component and partially vaporizing the mass to form a matrix adjacent the conductive electrical component. The matrix can have at least one void within it.
In another aspect, the invention encompasses a method of forming a material adjacent a conductive electrical component which includes providing a mass comprising polyimide or photoresist adjacent the conductive electrical component. The method further includes at least partially vaporizing the mass.
In another aspect, the invention encompasses a method of forming a material between a pair of conductive electrical components. The method includes forming at least one support member between the pair of conductive electrical components. The method further includes providing a mass between the at least one support member and each of the pair of conductive electrical components. Additionally, the method includes vaporizing the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components.
In yet another aspect, the invention encompasses an insulating material adjacent a conductive electrical component. The insulating material comprises a matrix and at least one void within the matrix.
In yet another aspect, the invention encompasses an insulating region between a pair of conductive electrical components. The insulating region comprises a support member between the conductive electrical components, the support member not comprising a conductive interconnect. The insulating region further comprises at least one void between the support member and each of the pair of conductive electrical components.


REFERENCES:
patent: 3919060 (1975-11-01), Pogge et al.
patent: 3954523 (1976-05-01), Magdo et al.
patent: 3979230 (1976-09-01), Anthony et al.
patent: 3998662 (1976-12-01), Anthony et al.
patent: 4063901 (1977-12-01), Shiba
patent: 4180416 (1979-12-01), Brock
patent: 4561173 (1985-12-01), Te Velde
patent: 5023200 (1991-06-01), Blewer et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5141896 (1992-08-01), Katoh
patent: 5149615 (1992-09-01), Chakravorty et al.
patent: 5171713 (1992-12-01), Matthews
patent: 5192834 (1993-03-01), Yamanishi et al.
patent: 5266519 (1993-11-01), Iwamoto
patent: 5286668 (1994-02-01), Chou
patent: 5298311 (1994-03-01), Bentson et al.
patent: 5380679 (1995-01-01), Kano
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5464786 (1995-11-01), Figura et al.
patent: 5470801 (1995-11-01), Kapoor et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5494858 (1996-02-01), Gnade et al.
patent: 5496773 (1996-03-01), Rhodes et al.
patent: 5525857 (1996-06-01), Gnade et al.
patent: 5527737 (1996-06-01), Jeng
patent: 5554567 (1996-09-01), Wang
patent: 5559666 (1996-09-01), Figura et al.
patent: 5583078 (1996-12-01), Osenbach
patent: 5599745 (1997-02-01), Reinberg
patent: 5629238 (1997-05-01), Choi et al.
patent: 5654224 (1997-08-01), Figura et al.
patent: 5670828 (1997-09-01), Cheung et al.
patent: 5691565 (1997-11-01), Manning
patent: 5691573 (1997-11-01), Avanzino et al.
patent: 5723368 (1998-03-01), Cho et al.
patent: 5736425 (1998-04-01), Smith et al.
patent: 5744399 (1998-04-01), Rostoker et al.
patent: 5773363 (1998-06-01), Derderian et al.
patent: 5804508 (1998-09-01), Gnade et al.
patent: 5807607 (1998-09-01), Smith et al.
patent: 5808854 (1998-09-01), Figura et al.
patent: 5861345 (1999-01-01), Chou et al.
patent: 5882978 (1999-03-01), Srinivasan et al.
patent: 5883014 (1999-03-01), Chen et al.
patent: 5950102 (1999-09-01), Lee
patent: 5967804 (1999-10-01), Yoshizawa et al.
patent: 5970360 (1999-10-01), Cheng et al.
patent: 5981085 (1999-11-01), Nonomiya et al.
patent: 6001747 (1999-12-01), Annapragada
patent: 6028015 (2000-02-01), Wang et al.
patent: 6153374 (2000-12-01), Forbes et al.
patent: 6245439 (2001-06-01), Yamada et al.
patent: 6333556 (2001-12-01), Juengling et al.
patent: 6347446 (2002-02-01), Luthra et al.
patent: 6350679 (2002-02-01), McDaniel et al.
patent: 0 542 262 (1993-05-01), None
patent: 0 923 125 (1999-06-01), None
Abstract: Townsend, P., et al., “Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for ULSI Interlayer Dielectric”, The Dow Chemical Company, Midland, MI, undated, 9 pp.
Homma, T., “Low Dielectric Constant Materials and Methods for Interlayer Dielectric Films in Ultralarge-Scale Integrated Circuit Multilevel Interconnections”, Materials Science and Engineering, R23 (1998), pp. 243-285.
Product Brochure and Material Safety Data Sheet, “Interlayer Dielectric”, JSR Microelectronics (1997), 12 pp.
Wolf, S., “Silicon Processing for the VLSI Era”, vol. 1, Lattice Press 1986, pp. 429-437.
Stanley Wolf, “Silicon Processing for the VLSI Era”, 1986, pp. 1-8.
U.S. patent application Ser. No. 08/948,372, Forbes et al., filed Oct. 9, 1997.
Togo, M., “A Gate-side Air-gap Structure (GAS) to Reduce the Parasitic Capacitance in MO

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