Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2009-04-13
2011-11-01
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE29343
Reexamination Certificate
active
08049304
ABSTRACT:
The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.
REFERENCES:
patent: 6007875 (1999-12-01), Grunwald et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6551929 (2003-04-01), Kori et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6730164 (2004-05-01), Vaartstra et al.
patent: 6809370 (2004-10-01), Colombo et al.
patent: 6833161 (2004-12-01), Wang et al.
patent: 6930059 (2005-08-01), Conley et al.
patent: 6936901 (2005-08-01), Yamamoto
patent: 6958302 (2005-10-01), Ahn et al.
patent: 7151039 (2006-12-01), Lee et al.
patent: 7332442 (2008-02-01), Vaartstra et al.
patent: 2004/0238872 (2004-12-01), Lee et al.
patent: 2005/0023584 (2005-02-01), Derderian et al.
patent: 2005/0227003 (2005-10-01), Carlson et al.
patent: 2006/0249077 (2006-11-01), Kim et al.
patent: 2008/0020593 (2008-01-01), Wang et al.
patent: WO 2004/108985 (2004-12-01), None
Rittersma, Z.M., et al., HfSiO4 Dieletric Layers Deposited by ALD Using HfCI4 and NH2(CH2)3SI(OC2H5)c Precursors, J. Eletrochem. Soc., vol. 151, Issue 11, published Oct. 22, 2004 (Abstract only, 2 pages).
Gealy F. Daniel
Korn David
Nelson Jeff
Rocklein Noel
Srividya Cancheepuram V.
Lerner David Littenberg Krumholz & Mentlik LLP
Potter Roy K
Round Rock Research, LLC
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