Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-06-28
1997-10-07
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257764, 257915, H01L 2943
Patent
active
056751869
ABSTRACT:
A Ti.sub.x N.sub.y layer, not necessarily stoichiometric, is interposed between a titanium or aluminum interconnect layer to improve adhesion and prevent re-entrant undercutting and lifting of the interconnect layer during the process of patterning and plasma etching to form interconnect lines on a substrate, such as an oxide.
REFERENCES:
patent: 4924295 (1990-05-01), Kuecher
patent: 4962414 (1990-10-01), Liou et al.
patent: 5231306 (1993-07-01), Meikle et al.
patent: 5459353 (1995-10-01), Kanazawa
Chang Mark
Cheung Robin
Ramaswami Sheshadri
Shen Lewis
Advanced Micro Devices , Inc.
Brown Peter Toby
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