Construction of and method of manufacturing an MIM or MIS electr

Details Construction of and method of manufacturing an MIM or MIS electr Construction of and method of manufacturing an MIM or MIS electr

1998-11-09

2000-03-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 30, H01L 2906, H01L 3900

Patent

active

060376066

ABSTRACT:
In an MIM or MIS electron source that is formed by a first conductive layer 101, an insulating layer 103 that is formed onto said first conductive layer 101, and a second conductive layer 104 that is formed onto said insulating layer 103, wherein a voltage is applied between said first and second conductive layers 101,104, so as to cause a tunneling current to occur in said insulating layer 103, the film thickness of said insulating layer 103 and the film thickness of said second conductive layer 104 are formed so as to be uniform.

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patent: 3816845 (1974-06-01), Cuomo et al.
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patent: 4472726 (1984-09-01), DiMaria et al.
patent: 5077762 (1991-12-01), Morimoto et al.
patent: 5281897 (1994-01-01), Fimml
patent: 5291274 (1994-03-01), Tamura
patent: 5401981 (1995-03-01), Michael et al.
patent: 5464989 (1995-11-01), Mori et al.

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