Constricted double heterostructure semiconductor laser

Details Constricted double heterostructure semiconductor laser Constricted double heterostructure semiconductor laser

1981-12-23

1984-01-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

044267010

ABSTRACT:
The invention is a semiconductor laser which includes a substrate with a pair of substantially parallel grooves in a surface thereof with a mesa therebetween where the height of the surface of the mesa above the bottom of the grooves is different than the height of the major surface of the substrate above the bottom of the grooves. Layers deposited on this substrate exhibit an increased taper in thickness in the lateral direction.

REFERENCES:
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 4215319 (1980-09-01), Botez
patent: 4383320 (1983-05-01), Botez et al.

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