Electricity: power supply or regulation systems – In shunt with source or load – Using a three or more terminal semiconductive device
Patent
1978-06-30
1981-04-28
Larkins, William D.
Electricity: power supply or regulation systems
In shunt with source or load
Using a three or more terminal semiconductive device
323311, 307297, 307304, 357 22, 357 42, H01L 2704, G05F 1613
Patent
active
042648572
ABSTRACT:
Disclosed is a constant voltage threshold device for providing a substantially constant voltage across a pair of terminals. The threshold device includes a field effect device having source and drain regions formed into an isolated semiconductor region which, in turn, is formed into a substrate. The distance between the drain region of the field effect device and the substrate is directly related to the threshold voltage of the threshold device. The threshold voltage is also determined by the relative doping levels of the various semiconductor regions and the value of various fixed biasing potentials applied to the various electrodes of the threshold device.
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Asai et al., 1976 IEEE IEDM Tech. Digest, pp. 185-187, (Dec. 1976), "Back-Gate Input MOS . . . ".
Galanthay Theodore E.
International Business Machines - Corporation
Larkins William D.
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