Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with other solid-state active device in integrated...
Patent
1992-09-21
1995-07-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with other solid-state active device in integrated...
257149, 257551, 257603, H01L 2990, H01L 2974
Patent
active
054303117
ABSTRACT:
A constant-voltage diode has a first semiconductor region of a first conductivity type, an adjoining semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type adjoining the second semiconductor region, and a fourth semiconductor region of the first conductivity type partially surrounded by the second semiconductor region. At low reverse biases between a cathode electrode and an anode electrode, the behavior of the device is determined by the pn junction between the first and second semiconductor regions. As the reverse biasing increases, the depletion layers of that junction will reach the fourth semiconductor region, but the reverse bias at this time is insufficient to break down that junction. A further increase of reverse bias causes breakdown of the pn junction between the third and fourth semiconductor regions. This effect is achieved by suitable impurity concentrations in the semiconductor regions. A plurality of fourth semiconductor regions may be provided, and a bi-directional structure can be obtained by providing a polarity reversed structure with the first semiconductor region in common.
REFERENCES:
patent: 4683483 (1987-07-01), Burnham et al.
patent: 5001537 (1991-03-01), Colman et al.
Patent Abstract of Japan, vol. 9, No. 318 (E-366) 13 Dec. 1985 and JP-A-60 152 057 (Hitachi Maikuro Computer Engineering KK) 10 Aug. 1985 (abstract).
Murakami Susumu
Narita Hiroshi
Satou Yukimasa
Hitachi , Ltd.
Mintel William
Tran Minhloan
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